features trenchfet power mosfet esd protected: 4000 v applications direct logic-level interface: ttl/cmos drivers: relays, solenoids, lamps, hammers battery operated systems, dc/dc converters solid-state relays load/power switching-cell phones, pagers TN0200K vishay siliconix new product document number: 72678 s-40243?rev. a, 16-feb-04 www.vishay.com 1 n-channel 20-v (d-s) mosfets product summary v ds (v) r ds(on) ( ) i d (a) 20 0.4 @ v gs = 4.5 v 0.73 20 0.5 @ v gs = 2.5 v 0.65 g s d top view 2 3 to-236 (sot-23) 1 marking code: k2ywl k2 = part number code for TN0200K y = year code w = week code l = lot traceability ordering information: TN0200K-t1?e3 (lead free) d s g 100 absolute maximum ratings (t a = 25 c unless otherwise noted) parameter symbol limits unit drain-source voltage v ds 20 v gate-source v oltage v gs 8 v continuous drain current (t j = 150 c) b t a = 25 c i d 0.73 continuous drain current (t j = 150 c) b t a = 70 c i d 0.58 a pulsed drain current a i dm 4 a continuous source current (diode conduction) b i s 0.3 power dissipation b t a = 25 c p d 0.35 w power dissipation b t a = 70 c p d 0.22 w operating junction and storage temperature range t j , t stg ? 55 to 150 c thermal resistance ratings parameter symbol limits unit maximum junction-to-ambient b r thja 357 c/w notes a. pulse width limited by maximum junction temperature. b. surface mounted on fr4 board, t 10 sec.
TN0200K vishay siliconix new product www.vishay.com 2 document number: 72678 s-40243?rev. a, 16-feb-04 specifications (t a = 25 c unless otherwise noted) limits parameter symbol test conditions min typ max unit static drain-source breakdown voltage v( br)dss v gs = 0 v, i d = 10 a 20 v gate-threshold v oltage v gs(th) v ds = v gs , i d = 50 a 0.45 0.6 1.0 v gate-body leakage i gss v ds = 0 v, v gs = 4.5 v 5 zero gate voltage drain current i dss v ds = 20 v, v gs = 0 v 1 a zero gate voltage drain current i dss t j = 55 c 10 on state drain current a i d( ) v ds 5 v, v gs = 4.5 v 2.5 a on-state drain current a i d(on) v ds 5 v, v gs = 2.5 v 1.5 a drain source on resistance a r ds( ) v gs = 4.5 v, i d = 0.6 a 0.2 0.4 drain-source on-resistance a r ds(on) v gs = 2.5 v, i d = 0.6 a 0.25 0.5 forward t ransconductance a g fs v ds = 5 v, i d = 0.6 a 2.2 s diode forward voltage a v sd i s = 0.3 a, v gs = 0 v 0.8 1.2 v dynamic b total gate charge q g 1400 2000 gate-source charge q gs v ds = 10 v, v gs = 4.5 v, i d = 0.6 a 190 pc gate-drain charge q gd 300 gate resistance r g 105 turn-on delay time t d(on) 17 25 rise time t r v dd = 10 v, r l = 16 20 30 ns turn-off delay time t d(off) v dd = 10 v , r l = 16 i d 0.6 a, v gen = 4.5 v, r g = 6 55 85 ns fall-time t f 30 45 notes a. pulse test: pw 300 s duty cycle 2%. b. guaranteed by design, not subject to production testing. typical characteristics (25 c unless noted) 0 1 2 3 4 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0.0 0.8 1.6 2.4 3.2 4.0 0.0 0.4 0.8 1.2 1.6 2.0 v gs = 5 thru 2.5 v t j = ? 55 c 125 c 1 v 25 c output characteristics transfer characteristics v ds ? drain-to-source voltage (v) ? drain current (a) i d v gs ? gate-to-source voltage (v) ? drain current (a) i d 2 v 1.5 v
TN0200K vishay siliconix new product document number: 72678 s-40243?rev. a, 16-feb-04 www.vishay.com 3 typical characteristics (25 c unless noted) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 ? on-resistance ( r ds(on) ) 0 25 50 75 100 125 150 175 200 0 4 8 12 16 20 0.7 0.9 1.1 1.3 1.5 1.7 ? 50 ? 25 0 25 50 75 100 125 150 0 1 2 3 4 5 0.0 0.3 0.6 0.9 1.2 1.5 0.0 0.2 0.4 0.6 0.8 1.0 01234567 v ds ? drain-to-source voltage (v) c rss c oss c iss v ds = 10 v i d = 0.6 a i d ? drain current (a) v gs = 4.5 v i d = 0.6 a v gs = 2.5 v gate charge on-resistance vs. drain current ? gate-to-source voltage (v) q g ? total gate charge (nc) c ? capacitance (pf) v gs capacitance on-resistance vs. junction temperature t j ? junction temperature ( c) 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 012345 t j = 150 c t j = 25 c i d = 0.6 a 5 0.1 0.001 source-drain diode forward voltage on-resistance vs. gate-to-source voltage ? on-resistance ( r ds(on) ) v sd ? source-to-drain voltage (v) v gs ? gate-to-source voltage (v) ? source current (a) i s v gs = 4.5 v 1 0.01 r ds(on) ? on-resiistance (normalized)
TN0200K vishay siliconix new product www.vishay.com 4 document number: 72678 s-40243?rev. a, 16-feb-04 typical characteristics (25 c unless noted) 10 ? 3 10 ? 2 1 10 600 10 ? 1 10 ? 4 100 ? 0.4 ? 0.3 ? 0.2 ? 0.1 ? 0.0 0.1 0.2 ? 50 ? 25 0 25 50 75 100 125 150 i d = 50 a 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 threshold voltage variance (v) v gs(th) t j ? temperature ( c) normalized thermal transient impedance, junction-to-ambient square wave pulse duration (sec) normalized effective transient thermal impedance 0.001 100 100,000 gate current vs. gate-source voltage 0.1 1 10 1,000 ? gate current ( i gss a) 0 26810 t j = 25 c t j = 150 c 0.01 4 v gs ? gate-to-source voltage (v) 10,000 0 1 5 power (w) single pulse power, junction-to-ambient time (sec) 3 4 1 600 10 0.1 0.01 2 100 safe operating area v ds ? drain-to-source voltage (v) 10 0.1 0.1 1 10 100 0.001 1 t a = 25 c single pulse ? drain current (a) i d 0.01 i dm limited i d(on) limited r ds(on) limited bv dss limited 10 ms 100 ms dc 10 s 1 s 1 ms
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